Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching

Atomic-layer soft plasma etching of MoS2

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2...

Plasma atomic layer etching using conventional plasma equipment

The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching PALE is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with caref...

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si ...

InP-based Waveguides: comparison of ECR Plasma Etching and Wet-chemical Etching

1 COBRA Inter-University Research Institute on Communication Technology Eindhoven University of Technology –Faculty of Electrical Engineering Telecommunications Technology and Electromagnetics – Opto-Electronic Devices Group P.O.Box 513, 5600 MB Eindhoven, The Netherlands E-mail: [email protected] 2 Department of Electronic Materials Engineering, Research School of Physical Sciences and En...

Wet and Dry Etching Theory